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  <front>
    <journal-meta />
    <article-meta>
      <title-group>
        <article-title>Numerical Simulations of Optical Multilayer Structure with an Embedded Octahedron Nanocrystals Using a FEM Based Approach</article-title>
      </title-group>
      <contrib-group>
        <aff id="aff0">
          <label>0</label>
          <institution>Grazia Lo Sciuto Department of Engineering Roma Tre University Rome</institution>
          ,
          <country country="IT">Italy</country>
        </aff>
      </contrib-group>
      <fpage>65</fpage>
      <lpage>70</lpage>
      <abstract>
        <p>-This theoretical study describes the optical multilayer structure models leading to investigate Surface Plasmon Polariton (SPP) to an extern applied magnetic field at visible wavelenght using a 3D-FEM based on Comsol Multiphysics software. The layered structures include the amorphous silicon c-Si octahedral nanocrystals on the interface SiO2/dielectric were investigated to enhance the SPP intensity.</p>
      </abstract>
      <kwd-group>
        <kwd>-Nanoplasmonics</kwd>
        <kwd>FEM</kwd>
        <kwd>Surface Plasmon Polariton</kwd>
      </kwd-group>
    </article-meta>
  </front>
  <body>
    <sec id="sec-1">
      <title>-</title>
      <p>I. INTRODUCTION</p>
      <p>The rapid evolution of electronics and telecommunications
has been possible by the presence of innumerable high
performance devices based on silicon technology. The new
applications of microelectronics, photovoltaics and photonics
refer to effort to optimize the optical components. On the other
hand the complexity of the junction solar cell stems from the
delicate balance that exists between the different properties of
the materials used and the geometric structure of the cell itself.
Therefore several parameters affect the solar cell conversion
efficiency. Consequently, understanding of interaction between
the incident EM waves and materials is fundamental to define
an accurate analysis on effects due to the presence of the
nanostructures and electronic equipment.</p>
      <p>
        The development of nanoplasmonic has been a topic of
increasing interest in recent years. This recent progress has
been possible as a result of advances in nanofabrication
technology [
        <xref ref-type="bibr" rid="ref1">1</xref>
        ],[
        <xref ref-type="bibr" rid="ref2">2</xref>
        ]. Plasmonic nanoparticles are of great interest for
light trapping in thin-film silicon solar cells, Ag nanoparticles
can provide light-trapping performance, through excitation of
charge carriers, comparable to state-of-the-art random textures
in n i p amorphous silicon solar cells. The excellent light
trapping is a result of strong light scattering and low parasitic
absorption of self-assembled Ag nanoparticles embedded in
the back reflector. Infact, the characteristic length scale of
the structures necessary to manipulate and generate surface
plasmon polaritons (SPPs) in the visible and near-infrared
region of the optical spectrum is in the nanometre regime. The
plasmonic structures are used to increase optical absorption
and the power conversion effeciency in thin-film solar cells.
      </p>
      <p>Copyright c 2016 held by the author.</p>
      <p>
        The principal aspects of the fabrication of Si nanocrystals in
thin SiO2 layers with the Si substrate have been considered
in [
        <xref ref-type="bibr" rid="ref3">3</xref>
        ]. The Si nanocrystals are widely used for a number of
solid state electronic devices, such as solar cells, solid state
photosensors and thin film transistor for liquid crystal displays.
Third-generation photovoltaic devices are realized in silicon
nanocrystals (Si-NCs) embedded in a dielectric matrix [
        <xref ref-type="bibr" rid="ref4">4</xref>
        ], [
        <xref ref-type="bibr" rid="ref5">5</xref>
        ].
      </p>
      <p>In amorphous materials, the bond lenghts and number vary
slightly for different atoms in the lattice. The coordination
of bonds of an atom with its closest neighbours is almost
the same as in the corresponding crystalline material, but is
gradually lost with more distant neighbours. Thus amorphous
Si is a direct band semiconductor unlike crystalline Si, and
has a high absorption coefficient with a deposition process
applicable at low temperature.</p>
      <p>The most numerous defect type, crucial for use fo a-Si in
solar cells, is a dangling bond decreasing the charge carriers
lifetime and mobility. To improve this situation, hydrogen
(H) is incorporated into a-Si during fabrication. Hydrogenated
amorphous silicon a Si : H solar cells are a low-cost
alternative to bulk crystalline Si cells, offering a larger
absorption coefficient across the solar radiation spectrum. Thus,
an a Si : H film of thickness of 500 nm absorbs sufficient
sunlight to enable efficient solar cell operation, compared to
thicknesses of several tens to hundreds of microns that are
required for bulk crystalline Si devices.</p>
      <p>However, the high defect densities typically present in
a Si : H thin films limit the typical minority carrier diffusion
lengths to 100 nm3, consequently, a Si : H solar cells are
generally fabricated using even thinner a Si : H layers,
resulting in reduced absorption of incident solar radiation.
However, the significantly reduced thickness of their silicon
layer makes it more difficult for them to absorb sunlight.</p>
      <p>
        Therefore the capability of measuring the change of phase
by the reflection of polarized light on a surface or layer
structure allows a typical sensitivity of less than one nanometer
for the layer thickness and for the refractive index. The
thickness, homogeneity and interface qualities of the layers
can be measured directly, whereas the properties related to
the nanocrystal structure (like the crystallinity, the nanocrystal
size or the density of the layer) can be obtained indirectly
using proper optical models. From numerical simulation it
is possible create a relation between the optical properties
as spp with thickness of metal in a multilayer structure.
The external electric field effects on spectra and decay of
photoluminescence as well as on absorption spectra were
measured for CdSe nanoparticles in a polymethyl methacrylate
film by Takakazu Nakabayashi and al. [
        <xref ref-type="bibr" rid="ref6">6</xref>
        ].
      </p>
      <p>The major aim of the deposition of amorphous Si
nanoparticels on the SiO2 film is to improve solar light harvesting
and lead to increased efficiencies due to excitation of surface
plasmons polaritons. In this paper, the excitation of the SPP is
due to the combination of the amorphous silicon nanocrystal
related to the presence of SiO2=air and the exiting external
electric field source with wavelenght spanning from 300 to 700
nm. The numerical calculations and simulations for the
resolution of electromagnetic field have been developed to solve
Maxwell’s equation with the Finite Element Method (FEM)
using the commercial software packages Comsol Multiphysics.
This theoretical work used a 3D-FEM modeling based on
Comsol Multiphysics software to investigate the SPP in a
multilayer structure of SiO2 interfaces with dielectric substrate
containing the embedded small octahedral amorphous silicon
nanocrystals.</p>
      <p>
        The multilayer structures have a very important role in
Renewable energies integration in electric generation systems
to promote their use and then the economic development and
growth of rural areas and less developed countries have to be
considered so as their management problems [
        <xref ref-type="bibr" rid="ref7">7</xref>
        ], [
        <xref ref-type="bibr" rid="ref8">8</xref>
        ].
      </p>
      <p>II. THEORY: MODEL DRUDE FOR SURFACE PLASMON</p>
      <p>POLARITON</p>
      <p>Metals have different optical properties as dielectric
function compared to semiconductors and dielectric due to their
electronic band structure. In the Drude model Maxwells
equations describe an electromagnetic wave in a medium of
conductivity , and net zero charge.
(1)
(2)
(3)
(4)
@J
O B = + E</p>
      <p>@t</p>
      <p>In the absence of external charge and current densities, the
curl equations can be combined to yield the wave equation:</p>
      <p>This equation has plane wave solutions with complex
wavevectors</p>
      <p>The distance over which the wave drops to 1=e its original
value is known as the penetration or skin depth. Therefore it is
the expression for the penetration depth by taking the square
root of the expression for k2 and reinserting it into the plane
wave solution E~ = E~0ei(Re[~k] ~x !t)e Im[~k] ~x. It follows that
1
the 1=e distance is p = Im[k] . For the metals as silver, gold
and copper the electric field of optical waves falls to 1=e of
its initial value in a few nm.</p>
      <p>Surface plasmons represent coupling of an electromagnetic
field to the kinetic motion of free charge carriers. Surface
plasmons exist at the boundary between dielectric and conductor.
Oscillation of surface charge density is the source of the
electric fields. A discontinuity of the normal component of
the external electric field at the boundary of dielectric and
conductor with dielectric functions "d and "c, respectively:
(x; t) = 0ei(Kxx !t)
Ez1</p>
      <p>Ez0 = 4
where Ez1 and Ez0 are the normal components of electric
field in the conductor and dielectric respectively. The wave
function for a traveling charge density wave is:
(5)
(6)
(7)
(8)
(9)
O E =
O</p>
      <p>E =
O B = 0
free
O2E + k02 E = 0</p>
      <p>E~ = E~0ei(~k ~x !t)
k2 =
"!2 + i
! =
" !2 +
i !
"
which describe propagation and damping, respectively.
According to the Drude model for metals, the electrons in a
conductor behave like an ideal gas, and the real part of the
dielectric constant for a conductor varies as</p>
      <p>Kx is the wave vector along the boundary. The charge
oscillations are coupled with external electric field (Ex, Ez),
which has components normal to the surface and in the
propagation direction, and the transverse magnetic field (H).
The SPP is a p-polarized electromagnetic wave because its
electric field vector E lies in the plane (x, z) defined by the
surface normal and the propagation vector while the magnetic
field vector H is perpendicular to this plane. The wave function
for the normal component of the electric field is</p>
      <p>Ez = A ei(Kxx+Kzz !t)
where Kz is mostly imaginary. This causes exponential decay
from interface, making SPPs evanescent waves. The energy
density can exceed that of the incident radiation that excites
the SPP. The wave vectors Kx and Kz are related according
to the following:</p>
      <p>Kx2 + Kz2d;zc = "d;c (!=c)2
where "d;c is the complex dielectric function of the dielectric
or conductor, respectively. The dispersion relation for the
nonradiative SPP mode can be derived by applying Maxwells
equations together with the continuity conditions for E and
H. For p-polarized oscillations (Ey; Hx = Hz = 0), boundary
conditions yield, obtaining the surface plasmon wave vector
KSP P (!) = (!=c)
r "d"c
"d + "c
where the plasma frequency is:
"c(!) = 1</p>
      <p>N is free electron density, m and e, the mass and charge
of electron, and 0 the permittivity of free space. The field
intensity of SPPs also decreases exponentially both in
conductor and dielectric. The dispersion relationship using this
approximation elucidates an important physical phenomena.
Below the plasma frequency is imaginary and waves are
attenuated as they enter the metal. Above the plasma frequency
becomes real allowing for traveling waves. These traveling
waves are waves in the electron plasma and at the plasma
frequency they are completely longitudinal. The quantum of a
plasma oscillation is known as a plasmon. Surface plasmon
polaritons (SPP’s), can occur at any interface. The basic
structure of a propagating SPP is of an evanescent wave,
decaying exponentially in intensity normal to the interface,
and oscillating in the direction of propagation. Traditionally,
to find the solutions that constitute confined surface waves one
assumes that a wave exists at the boundary and solves for the
appropriate boundary conditions. The wavelength of the SPP
is defined by:</p>
      <p>SP P =</p>
      <p>2</p>
      <p>Re[KSP P ]
LSP P is the SPP propagation length, physically the energy
dissipated through the metal heating and it is the propagation
distance. Where:</p>
      <p>LSP P =</p>
      <p>1</p>
      <p>Im[KSP P ]</p>
      <p>III. MODEL DEVELOPMENT</p>
      <p>This theoretical work used a 3D-FEM modeling based on
Comsol Multiphysics software to investigate the SPP in a
multilayer structure of SiO2 interfaces with dielectric (air)
substrate containing the embedded small octahedral amorphous
silicon nanocrystals.</p>
      <p>The numerical procedure for FEM allows the approximate
solutions of partial differential equations (PDE) over a model
with specified boundary conditions. It is thereby a procedure
that may be used to solve many different kind of problems
in physics. A three-dimensional model of the structure is
created and constraints and parameters are applied on each
subdomain and boundary, defining the necessary expressions
for the incident wave, and setting the optical properties of the
different domain. The finished models are then exported to the
program Comsol Multiphysics chosen as environment for the
application tool. Thus, parasolid geometries are modified in
COMSOL Multiphysics to add the original CAD design the
external physical effects to simulate such as the optical effects.
The interesting model consists of octahedrons nanoparticles
(10)
(11)
(12)
(13)
centered, deposited and embedded on the SiO2 surface
(interface) of multilayer structure. The modes of SPP excitation
depends on the size and shape of a-Si nanoparticles. The
nanocrystals mostly have an lenght octahedral shape of 140
nm with optical property. Octahedron has a pyramid on the
top and a pyramid on the bottom, it is a square bipyramid
in any of three orthogonal orientations. The SiO2/dielectric
multilayer structure is shown in the fig. 2</p>
      <p>The thickness of the dielectric/SiO2 is fixed at 300nm. The
dimension of the domain is 600 nm x 600 nm.</p>
      <p>In the system the incoming electric field is a TM-polarized
F/m
nm
plane wave, in order to excite the SPP associated to the
nanoparticels. It was considered the contribution of surface
plasmon-polariton in the model with two different layers,
air and the insulator SiO2 (Silicon dioxide) substrate, where
are embedded the amorphous silicon’s nanocrystals (a-Si) in
the centre of structure.Amorphous silicon has distinct
advantages such as high refractive index, low absorption loss
at telecommunication wavelengths of 1550 nm , capability
of low-temperature (200-400C) plasma-enhanced chemical
vapor deposition (PECVD) on almost any substrates, and
even possibility for active modulation and detection. Recently,
it has emerged as an important material for integrated Si
photonics. A very low propagation loss of 2 3dB=cm at
1550 nm has been reported fora Si : H wire waveguides,
which is comparable to the crystalline Si counterparts with
the same dimensions.For this work the refractive index and
the extinction coefficient of SiO2 are respectively 1.52 and
1e 5 as shown in the below table the optical and electrical
data used for the SPP analysis:</p>
      <p>The a Si nanocrystals have excellent optical and electric
properties, including a high index refractive and extinction
coefficient at different wavelenghts in and near the visible part
of the spectrum. It is very common to find the description
of the optical properties of solids in terms of the index of
refraction n. The general relationship of n and epsilon is
n = p". When the radiation passes through a medium, some
part of it will always be attenuated,taken into account the
complex refractive index: n = n + ik where the real part
n is the refractive index and indicates the phase velocity,
while the imaginary part k is the ”extinction coefficient”. The
refractive index of a Si nanocrystals, as in all cases,decreased
monotonically with increasing wavelength:</p>
      <p>These surface polaritons are induced and generated by
electromagnetic radiation emitting in the visible region of the
spectrum, using different wavelenghts. The boundary condition
chosen for the surface of dielectric and SiO2 is perfectly
matched layer (PML) , meaning that is an artificial absorbing
layer for wave equations. The PML is used to limit the
reflections from kind of open, free-space, boundaries. For
boundaries the conditions for the perfect electric conductor
is given by:
n^</p>
      <p>E = 0
(14)</p>
      <p>In model the Cartesian axis system are chosen in such way
that the z-axis is normal to the xy plane of the layers. The
electromagnetic wave is assumed normal to the xy layer. The
surface polariton modes are found at the interface SiO2=air
where one of the face of amorphous silicons nanocystals sits
on interface of the substrate SiO2=air. Numerical simulations
confirm the role of the octahedron photonic crystal in the
coupling mechanism as shown in the Fig. 5. The information
about the SPP has been established by simulations for the
interaction the nanocrystals with the electromagnetic field.</p>
      <p>IV. CALCULATION AND RESULTS</p>
      <p>We have investigated the excitation of the SPP in an
extension of the simple metal surface at visible frequencies in
a-Si nanocrystals in two layer system.The method of analyses
for SPP’s is essentially the same of heterostructure or single
flat surface , however, because of the additional interface the
dispersion relation becomes more complex.It is possible to
excite surface polaritons of amorphous Si (a-Si) at frequencies
at which a-Si has a positive real component of the permittivity
and a large imaginary component. These modes on films of
aSi have similar or even superior characteristics to those on gold
films, with longer propagation lengths and similar confinement
d3
d4
d5
d6
to the thin film. The result obtained from FEM calculations
are the complex description of the fields in terms of Hz .</p>
      <p>The magnetic field decreases when the wavelenght is
increased in the range from 300 to 700 nm. Carefully studying
the magnetic field can reveal that the peak is shifting to
lower wavelenght, maximum energy is at 300 nm at different
magnetic field calculated on the interface nanocrystals/SiO2.
Systematic work has illustrated considering the interaction of
the SPP with the nanocrystal on interface of SiO2.</p>
      <p>Surface Plasmons are a result of the mutual-coupling
between photons and collectively oscillating electrons at the
dielectric/amorphuos silicon interface. The electromagnetic
energy of the surface plasmons are nicely confined in the
vicinity of the interface.It is calculated the magnetic field across
different directions respect to the nanocrystals to provide the
interactions between the nanocrystals and SiO2 surface. This
approach is consisted to calculate and relate the magnetic field
at different wavelenght and directions on surface SiO2. The
electromagnetic waves of SPP are detected travelling along
vertical, horizontal and diagonal directions of nanocrystals
positions as function of different wavelenghts throught the
interface SiO2/dielectric as shown in the Fig. 6 and Fig. 7.
The intensity of SPP is influenced by nanoparticels distance
and disposition. Applying the magnetic field, both the real and
the imaginary part of the SPP wavevector KSP P are modified.</p>
      <p>V. CONCLUSION</p>
      <p>The plasmonic applications represent an interesting
attraction due to the confinement of signals and light in structures
with the possibility to work in the optical near field, localizing
the surface plasmon polaritons known as electromagnetic</p>
      <p>Fig. 7. Magnetic Field vs wavelenght calculated in d1, d2, d3, d4, d5, d6
(see Fig. 5)
(EM) waves that propagate along metallic nano-structure.
The materials and technologies play an important role in the
development of plasmonics.</p>
      <p>
        For this reason, in the literature there are a large variety of
optimization techniques by using soft computing techniques
[
        <xref ref-type="bibr" rid="ref9">9</xref>
        ] in order to improve the conversion efficiency of solar cells
[
        <xref ref-type="bibr" rid="ref10">10</xref>
        ], [
        <xref ref-type="bibr" rid="ref11">11</xref>
        ], [
        <xref ref-type="bibr" rid="ref12">12</xref>
        ], [
        <xref ref-type="bibr" rid="ref13">13</xref>
        ].
      </p>
      <p>This study describes the implementation and development
of the application tool Comsol Multiphysics for the simulation
of the mechanisms and the interaction of the SPP with the
aSi nanocrystals on interface of SiO2/dielectric. To obtain a
high efficiency the models are initially created within Comsol
Multiphysics where it is easy to create a geometry, apply
boundary conditions, define the necessary expressions, e.g.
for the incident wave, and set the optical properties of the
different domains. We show the interactions between EM and
a-Si nanocrystals located on layer of nanostructure.</p>
    </sec>
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