The analysis of learning experiment methods of semiconductor microcircuits for individual prediction of their quality is carried out. A choice of the informative parameters and means of their control is made. The schemes of insertion the microcircuits in the course of investigation tests and modes of their control are justified. The analysis of microcircuits constructive and technological options is carried out. The program of investigation tests is developed. Results of learning experiment for 522 series microcircuits are given. The analysis of experimental data is carried out. It is recommended to use results of learning experiment for creation the mathematical prediction models of microcircuits quality.
Mathematical Modeling / S.V. Tyulevin, M.N. Piganov, E.S. Erantseva time of a signal in case of turning power on and off is used. At the same time on testing microcircuit they give supply voltage near-critical.
In a number of works the types of test influences when carrying out the diagnostic predicting check are specified.
Many works are devoted to choice and analysis of informative parameters. So, in [7] for prediction of chips quality it is offered to use the level of internal stresses. It is shown that the level of internal stresses depends on the operation modes of diffusion, epitaxy, oxidation, etc. In [8] it was used the distributions of thermal and physical parameters of high-power transistors. Authors in [9] as the informative parameters of semiconductor products on a plate use volt-ampere characteristics (VAC), volt-farad characteristic (VFC) or ampere-noise characteristic (ANC). At the same time they estimate charge stability in case of corona discharge influence. Information of semiconductor devices quality is performed also by m-parameter, which characterizes VAC not ideality level. It was used in case of prediction the transistors durability by image identification methods [10]. High informtiveness in case of electrophysical diagnosing of CMOS types microcircuits was shown by critical power voltage [11]. For quality control of digital integrated microcircuits assembly it is expedient to use matrix parameters of thermal communication [12]. Authors [13] for quality control of light-emitting diodes and semiconductor lasers suggest to use thermomechanical stresses. They arise both as a result of change the ambient temperature, and as a result of sharply heterogeneous self-heating of the instrumental structures by dissipation power. In [14] it is set that it is possible to estimate the semiconductor devices reliability by the value of mechanical stresses. They arise because of distinction the thermal extension coefficients of the applied materials. At the same time the concentration of minority carriers of a charge, their mobility and lifetime change, the energy levels displace.
To predict the drift of semiconductor devices parameters in time and their durability alloys m-parameter [15].
For a kind of transistors with a small area of emitter after passage the several pulses of current through direct switches emitter junction in the active standard mode there can be considerable leakage currents of emitter junction, increasing basis current in the micromode and reducing the current amplification factor [16]. On value of a leakage current they estimate quality of a product.
Authors [17] suggest to estimate CMOS type microcircuits quality on value of critical power voltage after influence of electric discharge. Rather informative parameter for many types of semiconductor devices quality is low-quality noise.
For measuring the electrical parameters the switching on schemes, adducing on fig. 1-5, were offered. At measuring the Usrb and K parameters the supply voltage is applied to the chip before submission the signals on the microcircuit inputs, switchoff is made upside-down. In remaining cases the signals first of all are applied on the microcircuit inputs, then – supply voltages as their increase are given, switch-off is made upside-down.
Mathematical Modeling / S.V. Tyulevin, M.N. Piganov, E.S. Erantseva
In the case of measuring the electrical parameters and testing the microcircuits it is allowed the simultaneous submission and switch-off supply voltage and signals on inputs and outputs of microcircuits. An error of setting up the test voltage and supply voltages must not exceed ±2%, test currents – ±4%.
Measuring instruments of a direct current and voltage shall have an accuracy class not worse than 1,0. The accuracy class of voltmeters – indicators of voltage level meters isn't regulated. Checking the values of supply voltage is made by the accuracy class voltmeter not worse 1,0 with input resistance at least 10kΩ /V.
Metrological aspects of control are given in [18].
Measuring the residual voltage on the output of integrated microcircuit in the case of I=Iout.max. is carried out according to the measurements scheme provided on fig. 1.
Value of the output current of I=Iout.max. is set (R3 resistor) by active component of equivalent loading and power supply E2. In case of connection the output I3 over the R2 resistor with E2 minus, the mirocircuit connects loading to the power supply, through R3 run current of I=Iout.max., causing existence of residual voltage Ures.
Value of Ures is controlled by the PV voltmeter.
Measurement of the operating voltage Uoper is carried out according to the scheme shown on fig. 2.
The operation voltage Uoper is called the minimum voltage, applied to the microcircuit input, that calls the connection of load to the power supply.
The microcircuit has two control inputs: input # 4 - # 3 and input # 4 - # 2.
Value of voltage Uoper is set discretely by power supplies E4 - E8. The presence or absence of the loading connection to the power supply registers the PV voltmeter – indicator of voltage level.
Measurement of the failure voltage Ufail are carried out according to the same scheme of measurement (fig. 2).
The failure voltage Ufail is called the maximum voltage applies to the microcircuit input which doesn't yet cause connection of loading to the power supply.
Value of voltage Ufail is set discretely by power supplies E4 – E8.
In the voltage range between Uoper and Ufail for the same control input, the microcircuit can either connect the load to the power supply or not connect it.
Measuring the consuming current in the closed status Icons. of the microcircuit and disruptive voltage in the supply circuits is carried out simultaneously according to the measurement scheme shown in Fig. 3.
Mathematical Modeling / S.V. Tyulevin, M.N. Piganov, E.S. Erantseva
Consumption current in the close state is the current flowing through the circuits of the microcircuit power supply, when the voltage is not supplied to the load by the microcircuit.
The disruptive voltage through the supply circuits is the maximum voltage applied to the microchip over the power circuits, which does not yet cause the load to be connected to the power supply without input signal.
Current consumption Icons. is controlled by microammeter RA, disruptive voltage Udisr is set by the power supply E3. If the microcircuit does not comply with technical requirements for the disruptive voltage Udisr, the current consumption Icons.. will be more than values specified in this requirements.
Control of the operation at maximum operating frequency of 100 Hz is carried out according to the control scheme shown in Fig. 4.
Test for faultless is carried out by method 700-1 OST 11 073.013-83 at the temperature + 850C. The scheme of switching on in case of tests is provided on fig. 5.
The holding time in normal conditions before measurement the parameters – 2 h.
Some questions of increasing the efficiency of ERP control are given in [19-24].
The made analysis revealed a row of problems when carrying out a learning experiment with bipolar microcircuits: absence of the approved schemes of switching on when carrying out investigation tests and low informtiveness of parameters by development the expected models. For 522 series microcircuits as the informative parameter it is recommended to use the value of residual voltage. Schemes of measurement of residual voltage, actuation voltages, consuming current, operating control, test for faultless are offered.
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